STTH1002C Datasheet, PDF (1/8 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

®
STTH1002C
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (typ)
t_rr (typ)
Up to 2 x 8A
200 V
175 °C
0.78 V
20 ns
FEATURES AND BENEFITS
■ Suited for SMPS
■ Low losses
■ Low forward and reverse recovery times
■ Insulated package: TO-220FPAB
■ High junction temperature
■ Low leakage current
DESCRIPTION
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged in DPAK, D²PAK, TO-220AB,
TO220-FPAB and I²PAK, this device is intended
for use in low voltage, high frequency inverters,
free wheeling and polarity protection applications.
A1
K
A2
A2
K
A1
TO-220AB
STTH1002CT
A2
K
I²PAK ^A1
STTH1002CR
K
A2
K
A1
TO-220FPAB
STTH1002CFP
K
K _A2
D²PA^AK¹
STTH1002CG
K ^A2
A1
DPAK
STTH1002CB
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value Unit
V_RRM Repetitive peak reverse voltage
I_F(RMS) RMS forward current TO-220AB / TO-220FPAB / I²PAK / D²PAK /
200
V
20
A
I_F(AV) Average forward
current δ =0.5
DPAK
10
TO-220AB / I²PAK Tc = 155°C Per diode
5
A
/ D²PAK / DPAK
Tc = 150°C Per device
10
Tc = 135°C Per diode
8
Tc = 125°C Per device 16
TO-220FPAB
Tc = 140°C Per diode
5
Tc = 120°C Per device 10
Tc = 110°C Per diode
8
Tc = 75°C Per device 16
I_FSM Surge non repetitive forward current
tp = 10 ms Sinusoidal
50
A
T_stg Storage temperature range
- 65 + 175 °C
Tj Maximum operating junction temperature
175
°C
March 2004 - Ed: 4
1/8