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| STN2NE10L_07 Datasheet, PDF (4/12 Pages) STMicroelectronics – N-channel 100V - 0.33Ω -2A - SOT-223 | |||
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Electrical characteristics
2
Electrical characteristics
STN2NE10L
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
V(BR)DSS
Drain-source breakdown
voltage
Zero gate voltage drain
IDSS current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
ID = 250 µA, VGS= 0
100
VDS = Max rating,
VDS = Max rating @125°C
VGS = ±20V
VDS= VGS, ID = 250µA
1
VGS= 10V, ID= 1A
VGS= 5V, ID= 1A
Typ.
1.7
0.33
0.38
Max. Unit
V
1
µA
10 µA
± 100 nA
3
V
0.4
â¦
0.45 â¦
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS>ID(on) x RDS(on)max,
ID=1A
VDS =25V, f=1 MHz, VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=80V, ID = 7A
VGS =5V
(see Figure 13)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
1
3
S
345
pF
45
pF
20
pF
10 14 nC
5
nC
4
nC
4/12
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
rise time
td(off)
tf
Turn-off-delay time
fall time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test conditions
VDD=50 V, ID=3.5A,
RG=4.7â¦, VGS=5V
(see Figure 14)
VDD=50 V, ID=3.5A,
RG=4.7â¦, VGS=5V
(see Figure 14)
VDD=80 V, ID=7A,
RG=4.7â¦, VGS=5V
(see Figure 14)
Min. Typ. Max. Unit
7
ns
17
ns
22
ns
8
ns
8
ns
9
ns
19
ns
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