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STN2NE10L_07 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 100V - 0.33Ω -2A - SOT-223
STN2NE10L
N-channel 100V - 0.33Ω -2A - SOT-223
STripFET™ Power MOSFET
General features
Type
STN2NE10L
VDSS
(@Tjmax)
100V
RDS(on)
<0.4Ω
ID
1.8A
■ Exceptional dv/dt capability
■ Avalanche rugged technology
■ 100% avalanche tested
■ Low threshold drive
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
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3
2
1
SOT-223
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
STN2NE10L
February 2007
Marking
N2NE10L
Package
SOT-223
Packaging
Tape & reel
Rev 5
1/12
www.st.com
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