STL9N3LLH5 Datasheet, PDF (4/12 Pages) STMicroelectronics – N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT™ (3.3x3.3) STripFET™ V Power MOSFET

Electrical characteristics
2
Electrical characteristics
STL9N3LLH5
(T_CASE=25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ.
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250 µA, V_GS= 0
30
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating @125 °C
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ± 22 V
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250 µA
1
R_DS(on)
Static drain-source on
resistance
V_GS= 10 V, I_D= 4.5 A
V_GS= 4.5 V, I_D= 4.5 A
15
19
Max. Unit
V
1
µA
10 µA
±100 nA
2.5 V
19 mΩ
22 mΩ
Table 5. Dynamic
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
R_G Gate input resistance
Test conditions
Min. Typ. Max. Unit
724
pF
V_DS =25 V, f=1 MHz,
V_GS=0
- 132
20
pF
pF
V_DD=15 V, I_D = 9 A
V_GS =4.5 V
-
(see Figure 14)
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
-
Open drain
5
nC
2
nC
2
nC
3.3
Ω
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD=15 V, I_D= 4.5 A,
R_G=4.7 Ω, V_GS= 10 V
(see Figure 13)
Min. Typ. Max. Unit
4
ns
4.2
ns
-
-
21
ns
3.5
ns
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