STL9N3LLH5 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT™ (3.3x3.3) STripFET™ V Power MOSFET

STL9N3LLH5
N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT™ (3.3x3.3)
STripFET™ V Power MOSFET
Features
Type
STL9N3LLH5
V_DSS
30 V
R_DS(on)
max
< 0.019 Ω
1. The value is rated according Rthj-pcb
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
I_D
9 A ⁽¹⁾
Applications
■ Switching applications
Description
This product utilizes the 5^th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available R_DS(on)*Q_g, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
PowerFLAT™(3.3x3.3)
(Chip scale package)
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STL9N3LLH5
Marking
9N3L
Package
PowerFLAT™ (3.3x3.3)
Packaging
Tape and reel
July 2009
Doc ID 16012 Rev 1
1/12
www.st.com
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