STL86N3LLH6AG Datasheet, PDF (4/16 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
2
Electrical characteristics
STL86N3LLH6AG
(T_CASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On/off states
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250 µA, V_GS= 0
30
V
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage drain
current (V_GS = 0)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
V_DS = 30 V,
V_DS = 30 V at T_C =125 °C
V_GS = ±20 V
V_DS= V_GS, I_D = 250 µA
V_GS= 10 V, I_D= 10.5 A
V_GS= 4.5 V, I_D= 10.5 A
1
µA
10 µA
±100 nA
1 1.7
2.5
V
0.004 0.0052 Ω
0.0067 0.0076 Ω
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
R_G Gate input resistance
Table 5. Dynamic
Test conditions
V_DS = 25 V, f=1 MHz,
V_GS=0
Min. Typ. Max. Unit
1350 1690 2030 pF
230 290 350 pF
140 176 210 pF
V_DD=15 V, I_D = 21 A
V_GS =4.5 V
(see Figure 14)
17
nC
8
nC
6
nC
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV 1.25 1.7
2
Ω
open drain
Symbol
Table 6. Switching times
Parameter
Test conditions
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD=15 V, I_D= 10.5 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 13)
Min.
-
-
-
-
Typ.
9.5
30
37
12
Max. Unit
-
ns
-
ns
-
ns
-
ns
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DocID026950 Rev 3