STL86N3LLH6AG Datasheet, PDF (1/16 Pages) STMicroelectronics – High avalanche ruggedness

STL86N3LLH6AG
Automotive-grade N-channel 30 V, 0.004 Ω typ., 80 A
STripFET™ H6 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
1
2
3
4
PowerFLAT™ 5x6
Features
Order code
STL86N3LLH6AG
V_DS
30 V
R_DS(on)
max
0.0052 Ω
I_D
80 A
• Designed for automotive application and
AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
• Wettable flank package
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
12 34
Top View
AM15540v2
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ H6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
Order code
STL86N3LLH6AG
Table 1. Device summary
Marking
Package
86N3LLH6
PowerFLAT™ 5x6
Packaging
Tape and reel
February 2015
This is information on a product in full production.
DocID026950 Rev 3
1/16
www.st.com