STL60P4LLF6 Datasheet, PDF (4/14 Pages) STMicroelectronics – Very low on-resistance

Electrical characteristics
STL60P4LLF6
2
Electrical characteristics
(T_C = 25 °C unless otherwise specified)
Table 4: On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current
Gate-body leakage
IGSS
current
VGS(th) Gate threshold voltage
RDS(on)
Static drain source
on-resistance
VGS = 0,
ID = 250 µA
VGS = 0,
VDS = 40 V
VGS = 0,
VDS = 40 V,
TC = 125 °C
VDS = 0,
VGS = ± 20 V
VDS = VGS,
ID = 250 µA
VGS = 10 V,
ID = 6.5 A
VGS = 4.5 V,
ID = 6.5 A
Min.
40
Typ.
Max. Unit
V
1
µA
10 µA
±100 nA
1
V
0.0115 0.014 Ω
0.015 0.019 Ω
Symbol
CISS
COSS
Crss
Qg
Qgs
Qgd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5: Dynamic
Test conditions
Min.
VDS = 25 V, f = 1 MHz,
VGS = 0
-
V DD= 20 V, ID = 13 A,
VGS = 4.5 V
Typ. Max. Unit
3525
pF
344
pF
238
pF
-
34
nC
11.3
nC
13.8
nC
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6: Switching times
Test conditions
VDD = 20 V, ID = 6.5 A,
RG = 4.7 Ω, VGS = 10 V
Min.
-
-
-
-
Typ.
49.4
60.6
170
20
Max. Unit
-
ns
-
ns
-
ns
-
ns
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DocID026840 Rev 2