STL60P4LLF6 Datasheet, PDF (1/14 Pages) STMicroelectronics – Very low on-resistance

STL60P4LLF6
P-channel 40 V, 0.0115 Ω typ.,60 A STripFET™ F6
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
Table 1: Device summary
Order codes Marking Package Packaging
PowerFLA™
STL60P4LLF6 60P4LLF6
Tape and reel
5x6
Features
Order codes
STL60P4LLF6
VDS
RDS(on)max.
ID
40 V
0.014 Ω
60
For the P-channel Power MOSFETs the
actual polarity of the voltages and the
current must be reversed.
December 2014
DocID026840 Rev 2
This is information on a product in full production.
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