STL42P6LLF6 Datasheet, PDF (4/14 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
STL42P6LLF6
2
Electrical characteristics
(T_C= 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 250 µA
VGS = 0 V, VDS = 60 V
IDSS
Zero gate voltage Drain
current
VGS = 0 V, VDS = 60 V,
TC = 125 °C
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ± 20 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.5 A
VGS = 4.5 V, ID= 4.5 A
Min. Typ. Max. Unit
60
V
1 µA
10 µA
±100 nA
1
2.5 V
0.023 0.026
Ω
0.028 0.034
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
RG Gate input resistance
Table 5: Dynamic
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0 V
VDD = 30 V, ID = 9 A,
VGS = 4.5 V (see Figure 14:
"Gate charge test circuit" )
ID = 0 A, gate DC bias = 0 V,
f = 1 MHz, magnitude of
alternative signal = 20 mV
Min.
-
-
Typ. Max. Unit
3780 - pF
262 - pF
-
170 - pF
-
30
- nC
-
10.8 -
nC
-
10.5 -
nC
-
1.7
-
Ω
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 6: Switching times
Test conditions
VDD = 30 V, ID = 4.5 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 13: "Switching times
test circuit for resistive load" )
Min.
-
-
-
-
Typ. Max. Unit
51.4 -
ns
39
-
ns
171
-
ns
21
-
ns
For the P-channel Power MOSFET, current polarity of voltages and current have
to be reversed.
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