STL42P6LLF6 Datasheet, PDF (1/14 Pages) STMicroelectronics – High avalanche ruggedness

STL42P6LLF6
P-channel 60 V, 0.023 Ω typ., 42 A STripFET™ F6
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
1
2
3
4
PowerFLAT™ 5x6
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
G(4)
Features
Order code
STL42P6LLF6
VDS
60 V
RDS(on) max.
0.026 Ω @ 10 V
ID
42 A
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
S(1, 2, 3)
Order code
STL42P6LLF6
For the P-channel Power MOSFET, current
polarity of voltages and current have to be
reversed.
AM01475v4
Table 1: Device summary
Marking
Package
42P6LLF6
PowerFLAT™ 5x6
Packaging
Tape and reel
February 2015
DocID025457 Rev 3
This is information on a product in full production.
1/14
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