STL3N10F7 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel enhancement mode

Electrical characteristics
2
Electrical characteristics
STL3N10F7
(T_CASE=25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On/off states
Test conditions
Min. Typ. Max. Unit
Drain-source breakdown
V_{(BR)DSS voltage, VGS= 0}
I_D = 250 μA
100
V
Zero gate voltage drain
I_{DSS current (VGS = 0)}
V_DS = 100 V
V_DS = 100 V, T_C= 125 °C
1 μA
100 μA
Gate body leakage current
I_GSS
(V_DS = 0)
V_GS = ± 20 V
±100 nA
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250 μA
2.5
4.5 V
Static drain-source on-
R_DS(on)
resistance
V_GS= 10 V, I_D= 2 A
0.062 0.07 Ω
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V_DS =25 V, f=1 MHz,
V_GS=0
V_DD=50 V, I_D = 4 A
V_GS =10 V
(see Figure 14)
Min. Typ. Max. Unit
- 408 -
pF
- 112 -
pF
- 10
-
pF
- 7.8
-
nC
-
3
-
nC
- 1.7
-
nC
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V_DD=50 V, I_D= 2 A,
R_G=4.7 Ω, V_GS= 10 V
(see Figure 13)
Min. Typ. Max. Unit
- 6.3
-
ns
-
3
-
ns
- 11
-
ns
-
4
-
ns
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DocID025948 Rev 2