STL3N10F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel enhancement mode

STL3N10F7
N-channel 100 V, 0.062 Ω typ., 4 A STripFET™ VII DeepGATE™
Power MOSFET in a PowerFLAT™ 2x2 package
Datasheet - production data
Features
1
2
3
1
2
3
6
5
4
PowerFLAT™ 2x2
Order code
STL3N10F7
V_DS
100 V
R_DS(on) max
I_D
0.07 Ω
4A
• N-channel enhancement mode
• Low gate charge
• 100% avalanche rated
Applications
• Switching applications
Figure 1. Internal schematic diagram
1(D) 2(D) 3(G)
D
S
Description
th
This device utilizes the 7 generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R_DS(on) in all
packages.
6(D) 5(D) 4(S)
Bottom view
AM11269v1
Order code
STL3N10F7
Table 1. Device summary
Marking
Packages
ST3N
PowerFLAT™ 2x2
Packaging
Tape and reel
April 2014
This is information on a product in full production.
DocID025948 Rev 2
1/13
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