STL120N8F7 Datasheet, PDF (4/14 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
STL120N8F7
2
4/14
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 80 V
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = 20 V
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 11.5 A
Min. Typ. Max. Unit
80
V
1 µA
100 nA
2
4
V
3.7 4.4 mΩ
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Table 5: Dynamic
Test conditions
Min. Typ. Max. Unit
- 4570 -
VDS = 25 V, f = 1 MHz, VGS = 0 V
-
800
-
pF
- 64
-
VDD = 40 V, ID = 23 A,
VGS = 10 V (see Figure 14:
"Gate charge test circuit")
- 60
-
- 24.7 - nC
- 14.8 -
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf
Fall time
Table 6: Switching times
Test conditions
VDD = 40 V, ID = 11.5 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 13: "Switching times test
circuit for resistive load" and
Figure 18: "Switching time
waveform")
Min. Typ. Max. Unit
- 34.5 -
- 16.8 -
-
60
-
ns
- 15.4 -
Table 7: Source-drain diode
Symbol
Parameter
Test conditions
VSD⁽¹⁾ Forward on voltage
VGS = 0 V, ISD = 23 A
trr
Reverse recovery time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
ISD = 23 A, di/dt = 100 A/µs,
VDD = 64 V (see Figure 15: "Test
circuit for inductive load
switching and diode recovery
times")
Min. Typ. Max. Unit
-
1.2
V
- 48.6
ns
- 65.6
nC
- 2.7
A
Notes:
(1) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
DocID027246 Rev 2