STL120N8F7 Datasheet, PDF (1/14 Pages) STMicroelectronics – High avalanche ruggedness

STL120N8F7
N-channel 80 V, 3.7 mΩ typ., 120 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Features
Order code VDS RDS(on) max.
ID
PTOT
STL120N8F7 80 V 4.4 mΩ 120 A 140 W
 Among the lowest RDS(on) on the market
 Excellent figure of merit (FoM)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S(1, 2, 3)
12 34
Top View
Order code
STL120N8F7
Table 1: Device summary
Marking
Package
120N8F7
PowerFLAT™ 5x6
Packing
Tape and reel
July 2015
DocID027246 Rev 2
This is information on a product in full production.
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