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| STI360N4F6 Datasheet, PDF (4/11 Pages) STMicroelectronics – High avalanche ruggedness | |||
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Electrical characteristics
2
Electrical characteristics
STI360N4F6, STP360N4F6
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
V(BR)DSS
Drain-source breakdown
voltage (VGS = 0)
Zero gate voltage
IDSS Drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source
on-resistance
Test conditions
ID = 250 µA
VDS = 40 V
VDS = 40 V, TC=125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 60 A
Min. Typ. Max. Unit
40
V
1 µA
100 µA
± 100 nA
3
4.5 V
TBD 1.8 mâ¦
Table 5.
Symbol
Dynamic
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 20 V, ID = 120 A,
VGS = 10 V
Min. Typ. Max. Unit
17930
pF
-
1560
-
pF
1170
pF
340
nC
- TBD - nC
TBD
nC
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 20 V, ID = 60 A
RG = 4.7 ⦠VGS = 10 V
Min. Typ. Max. Unit
- TBD - ns
- TBD - ns
4/11
Doc ID 023419 Rev 1
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