STI360N4F6 Datasheet, PDF (1/11 Pages) STMicroelectronics – High avalanche ruggedness

STI360N4F6, STP360N4F6
Features
N-channel 40 V, 120 A STripFET™ VI DeepGATE™
Power MOSFET in I²PAK and TO-220 packages
Datasheet − preliminary data
Order codes
V_DSS
R_DS(on)
max
STI360N4F6
STP360N4F6
40 V < 1.8 mΩ
1. Current limited by package
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness
I_D
120 A⁽¹⁾
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest R_DS(on) in all packages.
TAB
TAB
12³
I²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
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3
!-V
Table 1. Device summary
Order codes
STI360N4F6
STP360N4F6
Marking
360N4F6
Package
I²PAK
TO-220
Packaging
Tube
August 2012
Doc ID 023419 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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