STH185N10F3-6 Datasheet, PDF (4/16 Pages) STMicroelectronics – Ultra low on-resistance

Electrical characteristics
2
Electrical characteristics
STH185N10F3-6
(T_CASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On/off states
Test conditions
V_(BR)DSS
Drain-source breakdown
voltage
V_GS= 0, I_D = 250 µA
I_DSS
I_GSS
Zero gate voltage drain
current
V_GS = 0, V_DS= 100 V
V_GS = 0, V_DS= 100 V,
T_C=125°C⁽¹⁾
Gate body leakage current V_DS = 0, V_GS = ±20 V
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250 µA
R_DS(on)
Static drain-source
on- resistance
V_GS= 10 V, I_D= 60 A
1. Defined by design, not subject to production test.
Min. Typ. Max. Unit
100
V
10 µA
100 µA
±200 nA
2
4
V
3.9 4.5 mΩ
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V_GS = 0, V_DS = 25 V,
f = 1 MHz,
V_DD = 50 V, I_D = 120 A,
V_GS = 10 V
(see Figure 14)
Min. Typ. Max. Unit
- 6665 -
pF
-
786
-
pF
-
49
-
pF
- 114.6 -
nC
-
38.8
-
nC
-
31.9
-
nC
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V_DD = 50 V, I_D = 60 A
R_G = 4.7 Ω V_GS = 10 V
(see Figure 13,
Figure 18)
Min.
-
-
-
-
Typ. Max. Unit
25.6
-
ns
97.1
-
ns
99.9
-
ns
6.9
-
ns
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DocID027293 Rev 2