STH185N10F3-6 Datasheet, PDF (1/16 Pages) STMicroelectronics – Ultra low on-resistance

STH185N10F3-6
Automotive-grade N-channel 100 V, 180 A, 3.9 mΩ typ.,
STripFET™ F3 Power MOSFET in an H²PAK-6 package
Datasheet - production data
Features
Order code
V_DS
R_DS(on) max. I_D
TAB
STH185N10F3-6 100 V
4.5 mΩ
180 A
7
1
H²PAK-6
Figure 1. Internal schematic diagram
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• AEC-Q101 qualified
• Ultra low on-resistance
• 100% avalanche tested
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using STripFET™ F3 technology. It is
designed to minimize on-resistance and gate
charge to provide superior switching
performance.
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Order code
STH185N10F3-6
Table 1. Device summary
Marking
Packages
185N10F3
H²PAK-6
Packing
Tape and reel
October 2016
This is information on a product in full production.
DocID027293 Rev 2
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