STGB10M65DF2 Datasheet, PDF (4/20 Pages) STMicroelectronics – Trench gate field-stop IGBT, M series 650 V, 10 A low loss

Electrical characteristics
STGB10M65DF2
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
Parameter
Test conditions
V(BR)CES
Collector-emitter breakdown
voltage
VGE = 0 V, IC = 2 mA
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 10 A
VGE = 15 V, IC = 10 A,
TJ = 125 °C
VGE = 15 V, IC = 10 A,
TJ = 175 °C
IF = 10 A
VF Forward on-voltage
IF = 10 A, TJ = 125 °C
IF = 10 A, TJ = 175 °C
VGE(th)
ICES
Gate threshold voltage
Collector cut-off current
VCE = VGE, IC = 250 µA
VGE = 0 V, VCE = 650 V
IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V
Min. Typ. Max. Unit
650
V
1.55 2.0
1.9
V
2.1
1.5
1.3
V
1.2
5
6
7
V
25 µA
250 µA
Symbol
Parameter
Cies Input capacitance
Coes
Output
capacitance
Cres
Reverse transfer
capacitance
Qg Total gate charge
Qge
Gate-emitter
charge
Qgc
Gate-collector
charge
Table 5: Dynamic characteristics
Test conditions
VCE= 25 V, f = 1 MHz, VGE = 0 V
VCC = 520 V, IC = 10 A, VGE = 15 V
(see Figure 30: " Gate charge test
circuit")
Min. Typ. Max. Unit
- 840 -
-
63
-
pF
- 16
-
-
28
-
-
6
-
nC
-
12
-
Table 6: IGBT switching characteristics (inductive load)
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
Turn-on delay
time
-
19
-
ns
tr
(di/dt)on
Current rise
time
Turn-on
current slope
VCE = 400 V, IC = 10 A, VGE = 15 V,
RG = 22 Ω (see Figure 29: " Test circuit for
inductive load switching" )
- 7.4
-
ns
- 1086 - A/µs
td(off)
Turn-off-delay
time
-
91
-
ns
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