STGB10M65DF2 Datasheet, PDF (1/20 Pages) STMicroelectronics – Trench gate field-stop IGBT, M series 650 V, 10 A low loss

STGB10M65DF2
Trench gate field-stop IGBT, M series 650 V, 10 A low loss
Datasheet - production data
TAB
3
1
D2PAK
Figure 1: Internal schematic diagram
Features
 6 µs of short-circuit withstand time
 VCE(sat) = 1.55 V (typ.) @ IC = 10 A
 Tight parameter distribution
 Safer paralleling
 Low thermal resistance
 Soft and very fast recovery antiparallel diode
Applications
 Motor control
 UPS
 PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represents an optimum
compromise in performance to maximize the
efficiency of inverter systems where low loss and
short-circuit capability are essential. Furthermore,
a positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGB10M65DF2
Table 1: Device summary
Marking
Package
G10M65DF2
D²PAK
Packing
Tape and reel
October 2015
DocID027429 Rev 5
This is information on a product in full production.
1/20
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