STF11N65K3 Datasheet, PDF (4/13 Pages) STMicroelectronics – Gate charge minimized

Electrical characteristics
2
Electrical characteristics
STF11N65K3
(Tcase = 25 °C unless otherwise specified).
Table 4. On /off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V_(BR)DSS breakdown voltage (
V_GS = 0)
I_D = 1 mA
650
V
I_DSS
t(s) _IGSS
duc ^VGS(th)
Pro ^RDS(on)
Zero gate voltage
V_DS = 650 V
drain current (V_GS = 0) V_DS = 650 V, T_C=125 °C
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20 V
Gate threshold voltage V_DS = V_GS, I_D = 100 µA
Static drain-source on
resistance
V_GS = 10 V, I_D = 3.6 A
1 µA
50 µA
10 µA
3
4.5 V
0.765 0.85 Ω
olete _{Table 5.}
bs Symbol
Dynamic
Parameter
Test conditions
- ^O _Ciss
) _Coss
t(s ^Crss
duc ^Coss eq.
ro _RG
te ^{P Qg}
Q_gs
Obsole ^Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 50 V, f = 1 MHz,
V_GS = 0
Equivalent output
capacitance
V_DS = 0 to 520 V, V_GS = 0
Intrinsic gate resistnce f=1 MHz open drain
Total gate charge
Gate-source charge
Gate-drain charge
V_DD = 520 V, I_D = 7.2 A,
V_GS = 10 V
(see Figure 16)
Min. Typ. Max. Unit
1180
pF
-
125
- pF
14
pF
-
77
- pF
-
3
-
Ω
42
nC
-
7.4
- nC
23
nC
Table 6. Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V_DD = 310 V, I_D = 3.5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 15)
14.5
ns
14
ns
-
-
44
ns
35
ns
4/13
Doc ID 17931 Rev 2