STF11N65K3 Datasheet, PDF (1/13 Pages) STMicroelectronics – Gate charge minimized

STF11N65K3
N-channel 650 V, 0.765 Ω, 11 A, TO-220FP
SuperMESH3™ Power MOSFET
Features
Type
V_DSS
R_DS(on)
max
I_D
P_tot
STF11N65K3 650 V < 0.85 Ω 11 A 35 W
t(s) ^{■ 100% avalanche tested}
c _{■ Extremely high dv/dt capability}
du ^{■ Gate charge minimized}
ro ■ Very low intrinsic capacitances
P _{■ Improved diode reverse recovery}
te ^{characteristics}
le ■ Zener-protected
bso Applications
O _{■ Switching applications}
t(s) ^{- Description}
uc ^{This device is an N-channel Zener-protected}
d SuperMESH3™ Power MOSFET developed
ro ^{using STMicroelectronics' SuperMESH™}
P ^{technology, achieved through optimization of ST's}
well established strip-based PowerMESH™
te _{layout. In addition to a significant reduction in on-}
le _{resistance, this device is designed to ensure a}
o _{high level of dv/dt capability for the most}
Obs ^{demanding applications.}
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
STF11N65K3
Marking
11N65K3
Package
TO-220FP
Packaging
Tube
October 2011
Doc ID 17931 Rev 2
1/13
www.st.com
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