STD90NH02L_06 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 24V - 0.0052ohm - 60A - DPAK/IPAK STripFET TM Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD90NH02L- STD90NH02L-1
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
I_GSS
V_GS(th)
Zero gate voltage
drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 25mA, V_GS =0
V_DS = 20V
V_DS = 20V, T_C = 125°C
V_GS = ± 20V
V_DS = V_GS, I_D = 250µA
V_GS = 10V, I_D = 30A
V_GS = 5V, I_D = 15A
24
V
1
µA
10
µA
±100 nA
1
1.8
2.5
V
0.0052 0.006 Ω
0.007 0.011 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Q_oss(2)
Q_gls(3)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Third-quadrant gate
charge
R_G Gate input resistance
V_DS = 10V, I_D = 30A
V_DS = 15V, f = 1MHz,
V_GS = 0
V_DD = 10V, I_D = 30A
R_G = 4.7Ω V_GS = 10V
(see Figure 13)
V_DD = 10V, I_D = 60A,
V_GS = 10V, R_G = 4.7Ω
(see Figure 14)
V_DS =16V, V_GS =0V
V_DS < 0V, V_GS = 10V
f=1MHz Gate DC
Bias =0 Test Signal
Level =20mV
Open Drain
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Q_oss.= C_oss * ∆ Vin, C_oss = C_gd + C_gd. See Chapter 4: Appendix A
3. Gate charge for synchronous operation
Min. Typ. Max. Unit
40
S
2850
pF
800
pF
120
pF
13
ns
75
ns
50
ns
18 24.3 ns
47.5 64
nC
10
nC
7
nC
18.8
nC
44
nC
1
Ω
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