STD90N4F3_09 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET™ III Power MOSFET

Electrical characteristics
STD90N4F3, STI90N4F3, STP90N4F3, STU90N4F3
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
V_(BR)DSS
Drain-source breakdown
voltage
I_DSS
I_GSS
V_GS(th)
Zero gate voltage drain
current (V_GS = 0)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250 µA, V_GS= 0
40
V_DS = Max rating,
V_DS = Max rating,Tc = 125°C
V
10 µA
100 µA
V_GS = ±20 V
±200 nA
V_DS= V_GS, I_D = 250 µA
2
V_GS= 10 V, I_D= 40 A for DPAK
V_GS= 10 V, I_D= 40 A for IPAK,
I²PAK, TO-220
4V
5.0 5.8 mΩ
5.4 6.2 mΩ
Table 5. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾ Forward transconductance
V_DS =25 V, I_D=40 A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V_DS =25 V, f=1 MHz, V_GS=0
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=20 V, I_D = 80 A
V_GS =10 V
(see Figure 14)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ. Max. Unit
- 100
S
2200
pF
- 580
pF
40
pF
40 54 nC
- 11
nC
8
nC
4/16
Doc ID 14212 Rev 3