STD90N4F3_09 Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET™ III Power MOSFET

STD90N4F3, STI90N4F3, STP90N4F3, STU90N4F3
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V_DS Drain-source voltage (V_GS=0)
V_GS
I_D ⁽¹⁾
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
I_D
I_DM ⁽²⁾
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Derating factor
dv/dt ⁽³⁾ Peak diode recovery voltage slope
E_AS ⁽⁴⁾ Single pulse avalanche energy
T_j
Operating junction temperature
T_stg Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. I_SD ≤ 80 A, di/dt ≤ 400A/µs, V_DS ≤ V_(BR)DSS, Tj ≤ Tjmax
4. Starting Tj = 25°C, I_D = 40A, V_DD = 30V
Value
40
± 20
80
65
320
110
0.73
8
400
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
TO-220
I²PAK
IPAK
Unit
DPAK
Rthj-case Thermal resistance junction-case max
Rthj-a Thermal resistance junction-ambient max
62.5
Rthj-pcb ⁽¹⁾ Thermal resistance junction-ambient max
T_l
Maximum lead temperature for soldering purpose 300
1. When mounted on 1inch² FR-4 2Oz Cu board
1.36
100
275
°C/W
°C/W
50 °C/W
°C
Doc ID 14212 Rev 3
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