STD8N80K5 Datasheet, PDF (4/17 Pages) STMicroelectronics – Worldwide best FOM

Electrical characteristics
2
Electrical characteristics
STD8N80K5
(T_CASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On/off states
Test conditions
Drain-source breakdown
V_{(BR)DSS voltage}
I_D = 1 mA, V_GS= 0
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage drain
current (V_GS = 0)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on-
resistance
V_DS = 800 V
V_DS = 800 V, Tc=125 °C
V_GS = ± 20 V
V_DS = V_GS, I_D = 100 μA
V_GS = 10 V, I_D= 3 A
Min. Typ. Max. Unit
800
V
1 μA
50 μA
±10 μA
34 5V
0.8 0.95 Ω
Symbol
Parameter
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
- 450 - pF
- 50 - pF
V_DS =100 V, f=1 MHz, V_GS=0
-
1
- pF
(1)
C_o(tr)
(2)
C_o(er)
Equivalent capacitance time
related
Equivalent capacitance
V_GS = 0, V_DS = 0 to 640 V
energy related
R_G Intrinsic gate resistance
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
f = 1 MHz open drain
V_DD = 640 V, I_D = 6 A
V_GS =10 V
(see Figure 16)
- 57 - pF
- 24 - pF
-
6
-
Ω
- 16.5 - nC
- 3.2 - nC
- 11 - nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C_oss when
V_DS increases from 0 to 80% V_DSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C_oss
when V_DS increases from 0 to 80% V_DSS
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DocID024412 Rev 2