STD8N80K5 Datasheet, PDF (3/17 Pages) STMicroelectronics – Worldwide best FOM

STD8N80K5
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
V_GS
I_D
I_D
(1)
I_DM
P_TOT
(2)
I_AR
Gate-source voltage
Drain current T_C = 25 °C
Drain current T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Max current during repetitive or single
pulse avalanche
(3)
E_AS
(4)
dv/dt
(5)
dv/dt
Single pulse avalanche energy
(starting T_J = 25 °C, I_D=I_AS, V_DD= 50 V)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T_j
Operating junction temperature
T_stg Storage temperature
1. Pulse width limited by safe operating area.
2. Pulse width limited by T_Jmax.
3. Starting T_J = 25 °C, I_D=I_AS, V_DD= 50 V
4. I_SD ≤ 6 A, di/dt ≤ 100 A/μs, V_DS(peak) ≤ V_(BR)DSS
5. V_DS ≤ 640 V
± 30
6
4
24
110
2
114
4.5
50
- 55 to 150
Symbol
Table 3. Thermal data
Parameter
Value
R_thj-case Thermal resistance junction-case max.
(1)
R_thj-pcb Thermal resistance junction-pcb max.
1. When mounted on 1inch² FR-4 board, 2 oz Cu
1.14
50
Unit
V
A
A
A
W
A
mJ
V/ns
V/ns
°C
Unit
°C/W
°C/W
DocID024412 Rev 2
3/17