STD7NK30Z Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET

Electrical characteristics
STx7NK30Z
Table 7.
Symbol
Switching times
Parameter
t_d(on)
t_r
t_d(off)
t_f
t_r(Voff)
t_f
t_c
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
V_DD = 150 V, I_D = 3.5 A,
R_G = 4.7 Ω, V_GS = 10 V
Figure 15
V_DD = 240 V, I_D = 7 A,
R_G = 4.7 Ω, V_GS = 10 V
Figure 15
Min.
Typ.
11
25
20
10
8.5
8.5
20
Max. Unit
ns
ns
ns
ns
ns
ns
ns
Table 8.
Symbol
Source Drain Diode
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward On voltage
I_SD = 5 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 7 A, di/dt = 100 A/µs
V_DD = 40 V, T_j = 150 °C
Figure 20
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Typ.
154
716
9.3
Max. Unit
5
A
20 A
1.6 V
ns
nC
A
Table 9.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
BV_GSO(1)
Gate-source breakdown
voltage
Igs=± 1mA (open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
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