STD7NK30Z Datasheet, PDF (2/15 Pages) STMicroelectronics – N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET

Electrical ratings
1
Electrical ratings
STx7NK30Z
2/15
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
Drain-source voltage (V_GS = 0)
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
V_ESD(G-S)
Gate source ESD(HBM-C=100 pF,
R=1.5 kΩ)
dv/dt ⁽³⁾ Peak diode recovery voltage slope
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T_C=25 °C)
T_j
Operating junction temperature
T_stg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 5.7 A, di/dt ≤ 200 A/µs, VDD =80% V_(BR)DSS.
Value
TO-220, DPAK TO-220FP
300
± 30
5
3.2
20
50
0.4
5 ⁽¹⁾
3.2 ⁽¹⁾
20 ⁽¹⁾
20
0.16
2800
4.5
2500
-55 to 150
Unit
V
V
A
A
A
W
W/°C
V
V/ns
V
V
Table 3. Absolute maximum ratings
Symbol
Parameter
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
T_l
Maximum lead temperature for soldering
purpose
Value
Unit
TO-220, DPAK TO-220FP
2.50
6.25
V
62.5
V
300
A
Table 4.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by T_j max)
5
A
Single pulse avalanche energy
E_AS
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
130
mJ