STD65NF06 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD65NF06 - STP65NF06
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250µA, V_GS =0
60
V_DS = Max rating
V_DS = Max rating,@125°C
V_GS = ± 20V
V_DS = V_GS, I_D = 250µA
2
V_GS = 10V, I_D = 30A
V
1
µA
10 µA
±100 nA
4
V
11.5 14 mΩ
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
Forward
transconductance
V_DS= 25V_, I_D = 30A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25V, f = 1MHz,
V_GS = 0
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 30V, I_D = 30A
R_G = 4.7Ω V_GS = 10V
(see Figure 12)
Q_g
Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 30V, I_D = 60A,
V_GS = 10V, R_G = 4.7Ω
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
50
S
1700
pF
400
pF
135
pF
15
ns
60
ns
40
ns
16
ns
54 75 nC
10
nC
20
nC
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