STD65NF06 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET

STD65NF06 - STP65NF06
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS = 0)
V_GS
Gate- source voltage
I_D
Drain current (continuous) at T_C = 25°C
I_D
I_DM(1)
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
P_tot
Total dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽²⁾ Peak diode recovery voltage slope
E_AS ⁽³⁾
Single pulse avalanche energy
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤60A, di/dt ≤300A/µs, V_DD ≤V_(BR)DSS, Tj ≤T_JMAX
3. Starting Tj = 25 °C, I_D = 30A, V_DD = 40V
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb⁽¹⁾ Thermal resistance junction-pcb max
T_l
Maximum lead temperature for soldering
purpose (for 10sec. 1.6mm from case)
1. When mounted on FR-4 of 1 inch², 2 oz Cu
Value
60
± 20
60
42
240
110
0.73
10
390
-55 to 175
TO-220
DPAK
1.36
62.5
--
--
50
300
--
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Unit
°C/W
°C/W
°C/W
°C/W
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