STD5N95K5 Datasheet, PDF (4/26 Pages) STMicroelectronics – Ultra-low gate charge

Electrical characteristics
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Symbol
Parameter
Table 5: On/off-state
Test conditions
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Drain-source breakdown voltage
Zero gate voltage drain current
Gate body leakage current
Gate threshold voltage
Static drain-source on-resistance
VGS = 0 V, ID = 1 mA
VDS = 950 V, VGS = 0 V
VDS = 950 V, VGS = 0 V
TC = 125 °C⁽¹⁾
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 100 µA
VGS = 10 V, ID = 1.5 A
Min. Typ. Max. Unit
950
V
1 µA
50 µA
±10 µA
3
4
5
V
2 2.5 Ω
Notes:
(1)_{Defined by design, not subject to production test.}
Table 6: Dynamic
Symbol
Parameter
Test conditions
Ciss
Coss
Crss
Co(tr)⁽¹⁾
Co(er)⁽²⁾
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance time
related
Equivalent capacitance energy
related
VDS = 100 V, f = 1 MHz,
VGS = 0 V
VGS = 0 V,
VDS = 0 to 760 V
Rg Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
f = 1 MHz open drain
VDD = 760 V, ID = 3.5 A
VGS= 10 V
(see Figure 19: "Test
circuit for gate charge
behavior")
Min. Typ. Max. Unit
- 220 - pF
-
17
-
pF
-
1
- pF
-
30
-
pF
-
11
-
pF
- 17
-
Ω
- 12.5 - nC
-
2
- nC
-
10
-
nC
Notes:
(1)_{Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to}
80% VDSS.
(2)_{Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to}
80% VDSS.
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DocID024639 Rev 4