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STD5N95K5 Datasheet, PDF (1/26 Pages) STMicroelectronics – Ultra-low gate charge
STD5N95K5, STF5N95K5,
STP5N95K5, STU5N95K5
N-channel 950 V, 2 Ω typ., 3.5 A MDmesh™ K5
Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
Datasheet - production data
TAB
23
1
DPAK
3
12
TO-220FP
TAB
TAB
IPAK
3
2
1
TO-220
3
12
Figure 1: Internal schematic diagram
Features
Order code VDS
STD5N95K5
STF5N95K5
950 V
STP5N95K5
STU5N95K5
RDS(on) max.
2.5 Ω
ID
3.5 A
Ptot
70 W
25 W
70 W
70 W
 Industry’s lowest RDS(on) x area
 Industry’s best FoM (figure of merit)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STD5N95K5
STF5N95K5
STP5N95K5
STU5N95K5
Table 1: Device summary
Marking
Package
DPAK
5N95K5
TO-220FP
TO-220
IPAK
Packing
Tape and reel
Tube
January 2017
DocID024639 Rev 4
This is information on a product in full production.
1/26
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