STD5N80K5 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package

Electrical characteristics
STD5N80K5
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off-state
Symbol
Parameter
Test conditions
V(BR)DSS Drain-source breakdown voltage
IDSS Zero gate voltage drain current
IGSS
VGS(th)
RDS(on)
Gate body leakage current
Gate threshold voltage
Static drain-source on-resistance
VGS = 0 V, ID = 1 mA
VGS = 0 V, VDS = 800 V
VGS = 0 V, VDS = 800 V
TC = 125 °C⁽¹⁾
VDS = 0 V, VGS = ±20 V
VDD = VGS, ID = 100 µA
VGS = 10 V, ID = 2 A
Min. Typ.
800
3
4
1.50
Max. Unit
V
1 µA
50 µA
±10 µA
5
V
1.75 Ω
Notes:
(1)_{Defined by design, not subject to production test.}
Symbol
Ciss
Coss
Crss
Co(tr)⁽¹⁾
Co(er)⁽²⁾
Rg
Qg
Qgs
Qgd
Parameter
Table 6: Dynamic
Test conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Equivalent capacitance time
related
Equivalent capacitance
energy related
VGS = 0, VDS = 0 to 640 V
Intrinsic gate resistance
f = 1 MHz, ID= 0 A
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 640 V, ID = 4 A
VGS= 10 V
(see Figure 15: "Test circuit
for gate charge behavior")
Min. Typ.
- 177
- 15
- 0.3
- 33
12
- 16
-
5
- 1.7
- 2.9
Max.
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
pF
pF
Ω
nC
nC
nC
Notes:
(1)_{Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to}
80% VDSS.
(2)_{Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to}
80% VDSS.
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