STD5N80K5 Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package

STD5N80K5
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
ID
ID⁽¹⁾
PTOT
dv/dt ⁽²⁾
dv/dt ⁽³⁾
Tj
Tstg
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature range
Storage temperature range
± 30
4
2.3
16
60
4.5
50
- 55 to 150
V
A
A
A
W
V/ns
°C
Notes:
(1)_{Pulse width limited by safe operating area}
(2)_{ISD ≤ 4 A, di/dt =100 A/μs; VDS peak < V(BR)DSS, VDD = 640 V}
(3)_{VDS ≤ 640 V}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1)_{When mounted on FR-4 board of 1 inch², 2 oz Cu}
Value
2.08
50
Unit
°C/W
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by
Tjmax)
EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value Unit
1.2 A
165 mJ
DocID028513 Rev 2
3/16