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| STD5N52U Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STD5N52U, STF5N52U, STI5N52U
(Tcase =25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
Zero gate voltage
VDS = 525 V
drain current (VGS = 0) VDS = 525 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
resistance
VGS = 10 V, ID = 2.2 A
Min. Typ. Max. Unit
525
V
10 µA
500 µA
10 µA
3 3.75 4.5 V
1.28 1.5 â¦
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
529
pF
-
71
- pF
13.4
pF
Co(tr)(1)
Equivalent
capacitance time
related
VDS = 0 to 420 V, VGS = 0
-
11
- pF
Rg
Gate input resistance f=1 MHz open drain
Qg
Total gate charge
VDD = 416 V, ID = 4.4 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 17)
-
6
-
â¦
16.9
nC
-
4.2
- nC
8.4
nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 260 V, ID = 2.2 A,
RG = 4.7 â¦, VGS = 10 V
(see Figure 16)
Min. Typ. Max. Unit
11.4
ns
13.6
ns
-
-
23.1
ns
15
ns
4/18
Doc ID 15684 Rev 2
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