STD5N52U Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET

STD5N52U, STF5N52U, STI5N52U
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
I_AR
E_AS
dv/dt⁽²⁾
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Avalanche current, repetitive or not-repetitive
(pulse width limited by T_J max)
Single pulse avalanche energy
(starting T_J = 25 °C, I_D = I_AR, V_DD = 50 V)
Peak diode recovery voltage slope
V_ESD(G-S) G-S ESD (HBM C=100 pF; R=1.5 kΩ)
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T_C=25 °C)
T_J Operating junction temperature
T_stg Storage temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤ 4.4 A, di/dt ≤ 400 A/µs, peak V_DS ≤V_(BR)DSS
DPAK
70
Value
Unit
TO-220FP I²PAK
± 30
V
4.4
A
2.8
A
17.6
A
25
70
W
4.4
A
170
20
2800
2500
mJ
V/ns
V
V
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case
R_thj-amb
R_thj-pcb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb
DPAK
1.78
50
Value
Unit
TO-220FP I²PAK
5
1.78 °C/W
62.5
100 °C/W
°C/W
Doc ID 15684 Rev 2
3/18