STD50N03L Datasheet, PDF (4/16 Pages) STMicroelectronics – N-CHANNEL 30V - 9.2mohm - 40A - DPAK/IPAK STripFET TM III Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD50N03L - STD50N03L-1
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
V_(BR)DSS
Drain-source breakdown
voltage
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
I_D = 250µA, V_GS= 0
V_DS = 30V
V_DS = 30V, Tc=125°C
V_GS = ±20V
V_DS= V_GS, I_D = 250µA
V_GS= 10V, I_D= 20A
V_GS= 5V, I_D= 20A
Min. Typ. Max. Unit
30
V
1
µA
10 µA
±100 nA
1
V
9.2 10.5 mΩ
0.012 0.019 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
Q_OSS ⁽¹⁾ Output charge
R_G Gate input resistance
V_DS =25V, f=1MHz,
V_GS=0
V_DD= 15V, I_D = 40A
V_GS = 5V
(see Figure 13)
V_DS = 24V ; V_GS =0
f=1MHz Gate Bias
Bias=0 Test signal
Level=20mV
open drain
1. Q_OSS=C_OSS*D V_in; C_OSS= C_gd + C_gd. See Appendix A
Min. Typ. Max. Unit
1434
pF
294
pF
48
pF
10.4 14 nC
5.1
nC
3.7
nC
12.6
nC
1.1
Ω
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