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STD50N03L Datasheet, PDF (3/16 Pages) STMicroelectronics – N-CHANNEL 30V - 9.2mohm - 40A - DPAK/IPAK STripFET TM III Power MOSFET
STD50N03L - STD50N03L-1
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VGS
ID (1)
Gate-source voltage
Drain current (continuous) at TC = 25°C
ID
IDM (2)
Drain current (continuous) at TC=100°C
Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
EAS(3) Single pulse avalanche energy
TJ
Operating junction temperature
Tstg
Storage temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, ID =20A, VDD =15V
Table 2. Thermal data
Symbol
Parameter
RthJ-Case
RthJ-Amb
Tj
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Value
30
±20
40
36
160
60
0.4
230
-55 to 175
Value
2.5
100
275
Unit
V
V
A
A
A
W
W/°C
mJ
°C
Unit
°C/W
°C/W
°C
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