STD46P4LLF6 Datasheet, PDF (4/16 Pages) STMicroelectronics – Very low on-resistance

Electrical characteristics
STD46P4LLF6
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown Voltage
ID = 250 µA, VGS= 0
IDSS
Zero gate voltage
drain current
VDS = 40 V, (VGS = 0)
VDS = 40 V, Tc = 125 °C
IGSS
Gate body leakage
current
VGS = ± 20 V, (VDS = 0)
VGS(th)
Gate threshold
voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 23 A
VGS = 4.5 V, ID =23 A
Min. Typ. Max. Unit
40
V
1
µA
10
µA
±100 nA
1
2.5
V
0.0125 0.015 Ω
0.017 0.02
Ω
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5: Dynamic
Test conditions
VDS = 25 V, f=1 MHz,
VGS = 0
VDD = 20 V, ID = 46 A
VGS = 4.5 V
Min. Typ. Max. Unit
-
3525
-
pF
-
344
-
pF
-
238.5
-
pF
-
34
-
nC
-
11.3
-
nC
-
13.8
-
nC
For the P-channel Power MOSFETs the actual polarity of the voltages and the
current must be reversed.
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