STD46P4LLF6 Datasheet, PDF (1/16 Pages) STMicroelectronics – Very low on-resistance

STD46P4LLF6
P-channel 40 V, 0.0125 Ω typ., StripFET™ F6
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits the lowest R_DS(on) in all
packages.
Table 1: Device summary
Order codes Marking Package Packaging
STD46P4LLF6 46P4LLF6 DPAK
Tape and
reel
S(3)
Features
Order codes
STD46P4LLF6
VDSS
40 V
RDS(on)
max.
0.015 Ω
AM11258v1
ID
46 A
For the P-channel Power MOSFETs the
actual polarity of the voltages and the
current must be reversed.
December 2014
DocID025772 Rev 3
This is information on a product in full production.
1/16
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