STD3N80K5 Datasheet, PDF (4/23 Pages) STMicroelectronics – Worldwide best FOM

Electrical characteristics
STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified).
Symbol
Parameter
Table 4. On/off states
Test conditions
Drain-source breakdown
V_{(BR)DSS voltage (VGS= 0)}
Zero gate voltage drain
I_{DSS current (VGS = 0)}
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS(th) Gate threshold voltage
Static drain-source on-
R_{DS(on) resistance}
I_D = 1 mA
V_DS = 800 V
V_DS = 800 V T_j=125 °C
V_GS = ± 20 V
V_DS = V_GS, I_D = 100 μA
V_GS = 10 V, I_D= 1 A
Min. Typ. Max. Unit
800
V
1 μA
50 μA
±10 μA
34 5V
2.8 3.5 Ω
Symbol
Parameter
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
- 130 - pF
- 14 - pF
V_DS =100 V, f=1 MHz, V_GS=0
- 0.6 - pF
(1)
C_o(tr)
(2)
C_o(er)
Equivalent capacitance time
related
Equivalent capacitance
V_GS = 0, V_DS = 0
energy related
R_G Intrinsic gate resistance
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
f = 1 MHz, I_D=0
V_DD = 640 V, I_D = 2.5 A
V_GS =10 V
- 20 - pF
- 9 - pF
- 15.5 -
Ω
- 9.5 - nC
- 1.5 - nC
- 7.5 - nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C_oss when
V_DS increases from 0 to 80% V_DSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C_oss
when V_DS increases from 0 to 80% V_DSS
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DocID025000 Rev 3