STD3N80K5 Datasheet, PDF (3/23 Pages) STMicroelectronics – Worldwide best FOM

STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
Unit
DPAK TO-220FP TO-220 IPAK
V_GS Gate- source voltage
Drain current (continuous) at
I_D
T_C = 25 °C
I_D
(2)
I_DM
Drain current (continuous) at
T_C = 100 °C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
60
Max current during repetitive or
I_AR single pulse avalanche (pulse width
limited by T_jmax)
Single pulse avalanche energy
E_AS (starting T_J = 25 °C, I_D=I_AS, V_DD= 50
V)
(3)
dv/dt Peak diode recovery voltage slope
(4)
dv/dt MOSFET dv/dt ruggedness
T_j
Operating junction temperature
T_stg Storage temperature
1. For TO-220FP limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. I_SD ≤ 2.5 A, di/dt ≤ 100 A/μs, peak V_DS ≤ V_(BR)DSS
4. V_DS ≤ 640 V
30
(1)
2.5
1.6
10
20
60
1
V
A
A
A
60 W
A
65
4.5
50
-55 to 150
mJ
V/ns
V/ns
°C
Symbol
Table 3. Thermal data
Parameter
Value
Unit
DPAK TO-220FP TO-220 IPAK
R_thj-case Thermal resistance junction-case
R_thj-pcb Thermal resistance junction-pcb
R_thj-amb Thermal resistance junction-amb
1. When mounted on FR-4 board of 1 inch², 2 oz Cu
2.08
(1)
50
6.25
62.5
2.08
62.5 100
°C/W
DocID025000 Rev 3
3/23