STD37P3H6AG Datasheet, PDF (4/16 Pages) STMicroelectronics – Very low on-resistance

Electrical characteristics
STD37P3H6AG
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = -250 mA
IDSS
Zero gate voltage drain
current
IGSS
Gate-body leakage
current
VGS = 0 V, VDS = -30 V
VGS = 0 V, VDS = -30 V,
TCASE = 125 °C
VDS = 0 V, VGS = -20 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = 250 µA
VGS = -10 V, ID = -25 A
Min. Typ. Max. Unit
-30
V
-1
µA
-10
-100 nA
-2
-4 V
11 15 mΩ
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Table 5: Dynamic
Test conditions
VDS = -25 V, f = 1 MHz,
VGS = 0 V
Min. Typ. Max. Unit
- 1630 -
- 376
-
pF
- 230 -
VDD = -15 V, ID = -40 A, VGS = -
-
30.6
-
10 V (see Figure 14: "Gate
-
9.7
-
nC
charge test circuit")
-
10
-
Symbol
Parameter
td(on) Turn-on delay time
tr
Rise time
td(off) Turn-off delay time
tf
Fall time
Table 6: Switching times
Test conditions
VDD = -15 V, ID = -20 A
RG = 4.7 Ω, VGS = -10 V (see
Figure 13: "Switching times
test circuit for resistive load")
Min. Typ. Max. Unit
- 13.4 -
- 15.8 -
ns
- 23.6 -
- 9.4 -
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