STD37P3H6AG Datasheet, PDF (1/16 Pages) STMicroelectronics – Very low on-resistance

STD37P3H6AG
Automotive-grade P-channel -30 V, 11 mΩ typ., -49 A
STripFET™ H6 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
VDS RDS(on) max.
ID
PTOT
STD37P3H6AG -30 V 15 mΩ -49 A 60 W
• Designed for automotive applications and
AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
S(3)
Order code
STD37P3H6AG
AM11258v1
Table 1: Device summary
Marking
Package
37P3H6
DPAK
Packing
Tape and Reel
August 2015
DocID027952 Rev 1
This is information on a product in full production.
1/16
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