STD2NB60-1 Datasheet, PDF (4/11 Pages) STMicroelectronics – N-CHANNEL 600V - 3.3OHM - 2.6A DPAK/IPAK PowerMESHTM MOSFET

STD2NB60/STD2NB60-1
Table 11. Source Drain Diode
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM ^{(1) Source-drain Current}
(pulsed)
V_SD ^{(2) Forward On Voltage}
I_SD = 3.3 A; V_GS = 0
t_rr
Q_rr
I_RRAM
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCharge
I_SD = 3.3 A; di/dt = 100 A/µs
V_DD = 100 V; T_j = 150 °C
(see test circuit, Figure 18)
Note: 1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
3.3
A
13.2
A
1.6
V
500
ns
2.1
µC
8.5
A
Figure 3. Safe Operating Area
Figure 4. Thermal Impedance
Figure 5. Output Characteristics
Figure 6. Transfer Characteristics
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