STD2NB60-1 Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 600V - 3.3OHM - 2.6A DPAK/IPAK PowerMESHTM MOSFET

STD2NB60
STD2NB60-1
N-CHANNEL 600V - 3.3 Ω - 2.6A DPAK/IPAK
PowerMESH™ MOSFET
Table 1. General Features
Type
V_DSS
R_DS(on)
STD2NB60
600 V
< 3.6 Ω
STD2NB60-1 600 V
< 3.6 Ω
I_D
2.6 A
2.6 A
Figure 1. Package
FEATURES SUMMARY
■ TYPICAL R_DS(on) = 3.3 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and dv/
dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
IPAK
TO-251
3
1
DPAK
TO-252
Figure 2. Internal Schematic Diagram
Table 2. Order Codes
Part Number
STD2NB60T4
STD2NB60-1
Marking
D2NB60
D2NB60
April 2004
Package
DPAK
IPAK
Packaging
TAPE & REEL
TUBE
REV. 2
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