STD28P3LLH6AG Datasheet, PDF (4/15 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
STD28P3LLH6AG
2
Electrical characteristics
(T_case = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = -250 µA
IDSS
Zero gate voltage drain
current
IGSS
Gate-body leakage
current
VGS = 0 V, VDS = -30 V
VGS = 0 V, VDS = -30 V,
Tcase = 125 °C
VDS = 0 V, VGS = ±18 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = -250 µA
VGS = -10 V, ID = -6 A
VGS = -4.5 V, ID = -6 A
Min. Typ. Max. Unit
-30
V
-1
µA
-10
±100 nA
-1
-2.5 V
0.027 0.03 Ω
0.038 0.05 Ω
Symbol
Parameter
Ciss Input capacitance
Coss
Output
capacitance
Crss
Reverse transfer
capacitance
Qg Total gate charge
Qgs
Gate-source
charge
Qgd Gate-drain charge
Table 5: Dynamic
Test conditions
VDS = -25 V, f = 1 MHz, VGS = 0 V
VDD = -15 V, ID = -12 A, VGS = -10 V
(see Figure 14: "Gate charge test
circuit")
Min. Typ. Max. Unit
- 1480 -
- 170
-
pF
- 125 -
-
29
-
-
4.7
-
nC
-
5.6
-
Symbol Parameter
td(on)
Turn-on delay
time
tr
Rise time
td(off)
Turn-off delay
time
tf
Fall time
Table 6: Switching on/off (inductive load)
Test conditions
Min. Typ. Max. Unit
VDD = -15 V, ID = -6 A RG = 4.7 Ω,
VGS = -10 V (see Figure 13: "Switching
times test circuit for resistive load" )
-
10
-
- 7.9 -
ns
- 41.5 -
- 6.9 -
4/15
DocID028397 Rev 1