STD28P3LLH6AG Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STD28P3LLH6AG
Automotive-grade P-channel -30 V, 0.027 Ω typ., -12 A
STripFET™ H6 Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
VDS
STD28P3LLH6AG -30V
RDS(on)
max.
0.030Ω
ID
PTOT
-12A 33W
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
AM11258v1
 Designed for automotive applications and
AEC-Q101 qualified
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
 Logic level
Applications
 Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
Order code
STD28P3LLH6AG
Table 1: Device summary
Marking
Package
28P3LLH6
DPAK
Packing
Tape and reel
September 2015
DocID028397 Rev 1
This is information on a product in full production.
1/15
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